2002. 6. 25 1/3 semiconductor technical data BF421 silicon pnp triple diffused type revision no : 3 high voltage switching and amplifier application. color tv chroma output applications. features high voltage : v ceo >-300v complementary to bf420. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-200v, i e =0 - - -10 na v cb =-200v, i e =0, tj=150 - - -10 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -50 na dc current gain h fe v ce =-20v, i c =-25ma 50 - - - collector-emitter saturation voltage v ce(sat) i c =-30ma, i b =-5ma - - -0.6 v base-emitter voltage v be v ce =-20v, i c =-25ma - -0.75 - v transition frequency f t v ce =-10v, i c =-10ma 60 - - mhz reverse transfer capacitance c re v cb =-30v, i e =0, f=1mhz - - 1.6 pf characteristic symbol rating unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5 v collector current dc i c -50 ma peak i cp -100 collector power dissipation p c 625 mw base current i b -50 ma junction temperature t j 150 storage temperature range t stg -65 150
2002. 6. 25 2/3 BF421 revision no : 3 0 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v (low voltage region) 0 collector current i (ma) c 0 base-emitter voltage v (v) be be c i - v 10 dc current gain h fe -3 -10 -1 -0.3 collector current i (ma) c h - i ce(sat) collector-emitter saturation collector current i (ma) c v - i -4 -8 -12 -16 -20 -24 -28 -10 -20 -30 -40 -50 -60 common emitter 1.6 1.0 0.6 0.4 0.3 0.2 0.15 i =0.05ma 0 b 0.1 fe c -30 -100 5 30 50 100 300 500 c collector current i (ma) c fe h - i -0.3 5 dc current gain h fe 100 10 50 30 300 500 -1 -3 -10 -100 -30 common emitter ta=25 c v =-20v -10 -5 ce common emitter v =-10v ce ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -10 -20 -30 -40 -50 common emitter v =10v ce ta=100 c t a=25 c ta=-25 c 3.0 ta=25 c -10 -0.3 -0.05 -0.1 -0.5 -0.3 -1 -5 -3 -1 -3 common emitter ta=25 c -30 -100 i /i = 10 c b 5 2 voltage v (v) collector-emitter saturation c collector current i (ma) ce(sat) -0.05 -0.3 -0.1 -0.5 -0.3 -1 -1 -3 -10 -100 -30 i /i =5 common emitter -5 -3 ce(sat) v - i c c b ta=100 c 25 -25
2002. 6. 25 3/3 BF421 revision no : 3 c p (mw) collector power dissipation collector output capacitance c (pf) ob collector-base voltage v (v) cb transition frequency f (mhz) t collector current i (ma) c ambient temperature ta ( c) collector-emitter voltage v (v) collector current i (ma) c ce re reverse transfer capacitance c (pf) 1000 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature. i max.(pulsed) i max.(continuous) dc operation common emitter 0 0 0 re ob c .c - v -3 -10 -1 -0.3 0 c p - ta f - i -3 -10 safe operating area cb -40 -80 -120 -160 -200 -240 -280 2 4 6 8 10 i =0 f=1mhz ta=25 c e c ob c re 40 80 120 160 200 200 400 600 800 -30 -100 -300 -0.5 -1 -3 -5 -10 -30 -50 -100 -200 * c c * 100ms 10ms 1ms * * * tc -30 10 30 50 100 300 500 ta=25 c v =-20v ce v =-10v ce
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